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Fundamentals of Nanoscaled Field Effect Transistors

FUNDAMENTALS OF NANOSCALED FIELD EFFECT TRANSISTORS

Physics

Mathematics & Science

Gt Product Group

Binding Format

Marketing Imprint Name

B2B GT

CL Carton Count

Imprint Name

B2B & B2C

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

COLFR

POST SECONDARY FOUR YEAR

COLSO

COLJR

COLSR

Duration

Duration Unit Of Measure

Transaction Type

Front Cover.
Half Title Page.
Title Page.
Copyright Page.
Dedication.
Preface.
Contents.
1: Scaling of a MOS Transistor.
2: Nanoscale Effects: Gate Oxide Leakage Currents.
3: Nanoscale Effects: Inversion Layer Quantization.
4: Dielectrics for Nanoelectronics.
5: Germanium Technology.
6: Biaxial s-Si Technology.
7: Uniaxial s-Si Technology.
8: Alternate Structures for Nanoelectronic Applications.
9: Graphene Technology.
WKB Approximation.
References.
About the Editor.
Index.

Fundamentals of Nanoscaled Field Effect Transistors.css-1p8rvzy{position:absolute;padding-left:8px;}

Fundamentals of Nanoscaled Field Effect Transistors